characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) 050-7323 rev - 7-2002 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 1000 12 0.78 100 500 100 35 APT10078HLL 1000 12 48 30 40 250 2.0 -55 to 150 300 12 30 1300 g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com APT10078HLL 1000v 12a 0.780 ? ? ? ? ? power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? hermetic to-258 package ? military screening available power mos 7 r mosfet to-258
dynamic characteristics APT10078HLL 050-7323 rev - 7-2002 symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d[cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25c r g = 1.6 ? min typ max 2525 3100 429 650 70 100 93 140 12 15 59 90 918 816 30 45 920 unit pf nc ns characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d[cont.] ) reverse recovery time (i s = -i d[cont.] , dl s /dt = 100a/s) reverse recovery charge (i s = -i d[cont.] , dl s /dt = 100a/s) peak diode recovery dv / dt 5 source-drain diode ratings and characteristics unit amps volts ns c v/ns min typ max 12 48 1.3 692 7.87 10 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 18.06mh, r g = 25 ? , peak i l = 12a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d [ cont. ] di / dt 700a/s v r v dss t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein. thermal characteristics symbol r jc r ja min typ max 0.50 40 unit c/w characteristic junction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration z jc , thermal impedance (c/w) 0.50 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 0.02 0.05 0.2 d=0.5 0.01 single pulse
050-7323 rev - 7-2002 v ds , drain-to-source voltage (volts) figure 2, high voltage output characteristics figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 2 4 6 8 10 0 5 1015202530 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 60 50 40 30 20 10 0 12 10 8 6 4 2 0 2.5 2.0 1.5 1.0 0.5 0.0 30 25 20 15 10 5 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.2 1.1 1.0 0.9 0.8 0.7 0.6 typical performance curves graph deleted i d = 0.5 i d [cont.] v gs = 10v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v normalized to v gs = 10v @ 0.5 i d [cont.] 5.5v 6v 6.5v 7v 5v v gs =15 & 8v APT10078HLL
APT10078HLL 050-7323 rev - 7-2002 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage 20,000 10,000 1,000 100 10 200 100 10 1 v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 1000 .01 .1 1 10 50 0 20 40 60 80 100 120 140 0.3 0.5 0.7 0.9 1.1 1.3 1.5 48 10 1 16 12 8 4 0 c rss c iss c oss t j =+150c t j =+25c v ds =250v v ds =100v v ds =400v i d = i d [cont.] t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s to-258 package outline 5.08 (.200) bsc 1.14 (.045) 0.88 (.035) 17.65 (.695) 17.39 (.685) 4.19 (.165) 3.94 (.155) drain source gate 1.65 (.065) 1.39 (.055) dia. typ. 3 leads 17.96 (.707) 17.70 (.697) 19.05 (0.750) 12.70 (0.500) 21.21 (.835) 20.70 (.815) 8.89 (.350) 8.63 (.340) dimensions in millimeters and (inches) 3.56 (.140) bsc 6.86 (.270) 6.09 (.240) 13.84 (.545) 13.58 (.535) apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved.
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